PART |
Description |
Maker |
BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY55 BBY55-02V BBY55-03W BBY55-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package Silicon Tuning Diodes
|
INFINEON[Infineon Technologies AG]
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
BBY53-02W BBY53-03W BBY5307 BBY53-02L BBY53-02V |
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE Silicon Tuning Diode
|
Infineon Technologies AG Infineon Technologies A...
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SFH2030F SFH2030 SFH203FA Q62702-P955 Q62702-P956 |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium Fotodiode麻省理工sehr库泽Schaltzeit Silizium Fotodiode麻省理工Tageslichtsperrfilter
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|